-. Simulation works for verifying the new Si C technology and predicting the device electrical characteristics.
-. Analyze Si C technology and trends.
-. Creating new Si C device concepts and realizing next generation Si C technologies.
-. Si C derivative technology development from the proven new technology.
-. DOE planning to implement the new idea into the experiment and do the evaluation and analysis.
-. Cost and yield analysis for the new Si C technologies.
-. Cost saving works including yield-up activities for the new Si C technologies.
-. Technical support for issues in production
[자격요건]
-. Above BS degree or over in Semiconductor device physics or technology, Microelectronics or equivalent.
-. 5-8 years of experience in power semiconductor design and/or fabrication.
-. Hand-on experience in power semiconductors design and technology development.
-. Proficiency in TCAD simulation (Synopsys simulator preferred)
-. Understanding of material and strong knowledge in device physics, fabrication and characterization principles
-. Knowledge and experience in design for reliability and robustness.
-. Ability to address design and engineering issues and to provide proper solution.
-. Strong communication skills in English
[전형절차]
서류전형- 인터뷰
[제출서류] 영문이력서
-. Above BS degree or over in Semiconductor device physics or technology, Microelectronics or equivalent.
-. 5-8 years of experience in power semiconductor design and/or fabrication.
-. Hand-on experience in power semiconductors design and technology development.
-. Proficiency in TCAD simulation (Synopsys simulator preferred)
-. Understanding of material and strong knowledge in device physics, fabrication and characterization principles
-. Knowledge and experience in design for reliability and robustness.
-. Ability to address design and engineering issues and to provide proper solution.
-. Strong communication skills in English
[전형절차]
서류전형- 인터뷰
[제출서류] 영문이력서
서류전형- 인터뷰
[제출서류] 영문이력서
